Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiOₓ Memristors--Part II: Physics-Based Model

In the second part of this series, we propose a physics-based model for describing temperature dependence TiOₓ-based memristors, both switching and static. We show that current-voltage (I-V) characteristics memristor in nonswitching regime, indicating Schottky emission mechanism, can be described by minor modifications to current equation. This leads static I-V compact model. Simultaneously, dynamics parameters naturally emerges as mere scaling factor from is computationally efficient approach, which does not require any additional extend incorporating thermal dependence.